Changxin storage completed 15.6 billion yuan of financing, and domestic memory accelerated!

DRAM manufacturer Changxin storage completed a financing of 15.6 billion yuan, and the domestic replacement of memory chips was assisted by funds. On December 14, industry and commerce information showed that the second phase of big fund, Anhui state owned assets, Zhaoyi innovation, another Zhu Yiming controlled enterprise, Xiaomi Changjiang industry fund and other institutions took shares in Ruili integrated circuit Co., Ltd., the parent company of Changxin storage, with a financing price of 15.65 billion yuan.

According to the announcement of Zhaoyi innovation, Changxin storage is a wholly-owned subsidiary of Ruili integration and the only manufacturer of domestic DRAM memory in China. The executive partner of Shixi power collection, its largest shareholder, is Shixi Changxin, and the actual controller of Shixi Changxin is Zhu Yiming, the actual controller of Zhaoyi innovation.

Self developed memory chip project received financial support

China's storage manufacturing has made a breakthrough in the past year. In terms of NAND flash, on April 13, Changjiang storage, a subsidiary of Ziguang group, announced the successful development of 128 layer QLC 3D NAND flash.

Changxin storage focuses on DRAM. In February this year, Changxin storage announced that it had developed DDR4 and lpddr4x memories, using a 19 nm process, which is also the first self-developed DRAM chip in China. In May, a number of memory modules equipped with Changxin storage 10 nanometer DDR4 chip were listed, which really opened a new chapter in domestic memory.

Changxin storage is engaged in the design, R & D, production and sales of dynamic random access memory chip (DRAM). The first 12 inch wafer factory has been built and put into operation. Data show that the total investment of Changxin storage integrated circuit manufacturing base project is more than 220 billion yuan, of which, the 12 Xin memory wafer fabrication base project is the first Chinese mainland to integrate DRAM design and manufacturing project into mass production.

In this round of financing, the second phase of big fund and the three heavy and one innovation industry development fund under Anhui state-owned assets respectively invested 5 billion yuan in Ruili integration, 850 million yuan in Changxin integration invested by the old shareholder and Hefei state-owned assets, 4 billion yuan in total by 12 follow-up investors including Xiaomi Changjiang industry fund, and 500 million yuan in Hefei Jixin enterprise management partnership, Zhaoyi innovation invested 300 million yuan in convertible bonds.

After the capital increase, Zhaoyi innovation will hold about 0.85% equity of Ruili integration. At the level of business cooperation, the company signed the framework purchase agreement, OEM service agreement, product joint development platform cooperation agreement and related supplementary agreements with Changxin Storage Technology Co., Ltd., a wholly-owned subsidiary of Ruili integration, and will carry out business cooperation with Changxin storage at the level of product consignment, OEM service and product joint development.

For the second phase of the large fund, some insiders commented that the industrialization of Changxin storage memory products is expected to enter a stage of rapid development.

The impact on the world's fourth largest DRAM manufacturer, Changxin storage also has these help

According to the global DRAM memory chip market data in the second quarter of 2020 released by trendforce Jibang consulting, the top three DRAM manufacturers Samsung, SK Hynix and micron account for about 95% of the global market.

Jibang consulting analysts predict that in the fourth quarter of next year, the investment volume of Changxin storage will increase to 85000 pieces / month, and surpass South Asia technology to become the fourth largest DRAM manufacturer in the world. At present, the DRAM process of Changxin storage is mainly 19nm process, and it is expected that the updated 17nm process will be introduced into mass production next year. After its emergence, Changxin storage is expected to enhance its influence in the highly concentrated memory industry, both in terms of production capacity and technology.

In addition to independent research and development, Changxin storage has been improving its technology by means of acquisition. In December 2019, Changxin storage and the Canadian company wi laninc. The company that acquired a large number of qimengda patents from Infineon reached an agreement, and Changxin obtained more than 10 million technical documents and 2.8tb data related to DRAM according to the patent license agreement.

In April, according to the WeChat official account of Changxin, Changxin Storage Technology Co., Ltd. signed a patent license agreement with Rambus, a semiconductor company of the United States. According to this agreement, Changxin storage has obtained the implementation licenses of a large number of DRAM technology patents from Rambus.

The policy of semiconductor industry has been continuously strengthened, and the demand of focusing on making up the short board has been put forward. At present, the policy support around the memory chip industry is also adding power to the industrial process of China's first self-developed memory chip project.

On June 6, the signing ceremony of major cooperation matters in the integrated development of the Yangtze River Delta was held in Huzhou.

Among them, the Yangtze River Delta region plans to support the construction of Changxin 12 inch memory wafer manufacturing base project to enhance the competitiveness of integrated circuit industry in the Yangtze River Delta region. The business cooperation agreement of Changxin 12 inch memory wafer manufacturing base project is jointly signed by Changxin Storage Technology Co., Ltd., Suzhou Ruihong Electronic Chemicals Co., Ltd., Ningbo Jiangfeng Electronic Materials Co., Ltd. and Shanghai Xinsheng Semiconductor Technology Co., Ltd.

At the beginning of July, Anhui Province released the work plan for exposing key tasks in key areas, which hopes to solve some key technology bottles within 2-3 years, that is, chip projects pointing to Changxin storage.

In terms of memory technology, the scheme requires to promote the development of low-power and high-speed lpddr5 DRAM products, develop advanced low-power and high-speed lpddr5 products and realize industrialization for the independent and controllable needs of DRAM memory chips of medium and high-end mobile, tablet and consumer products.